Radio-frequency module and communication device

ABSTRACT

A radio-frequency module includes a module substrate, a hybrid filter for 5th Generation New Radio (5G-NR) n77 including a first acoustic wave resonator element, a first inductor, and a first capacitor, a filter for 5G-NR n79 including a second acoustic wave resonator element and a second inductor, power amplifiers, a third inductor coupled between the power amplifier and the hybrid filter, and a fourth inductor coupled between the power amplifier and the filter. The first inductor, the second inductor, the third inductor, and the fourth inductor are disposed at a major surface or inside the module substrate. The distance between the first inductor and the third inductor is larger than the distance between the second inductor and the fourth inductor.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application of PCT/JP2022/010794, filed on Mar.11, 2022, designating the United States of America, which is based onand claims priority to Japanese Patent Application No. JP 2021-059207filed on Mar. 31, 2021. The entire contents of the above-identifiedapplications, including the specifications, drawings and claims, areincorporated herein by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates to a radio-frequency module and acommunication device.

BACKGROUND ART

Patent Document 1 discloses a hybrid acoustic LC filter includingacoustic resonators (acoustic wave resonator elements), an inductor, anda capacitor. According to Patent Document 1, this hybrid acoustic LCfilter provides a relatively wide pass band and at the same timeachieves a strict out-of-band rejection specification.

CITATION LIST Patent Document

Patent Document 1: Japanese Unexamined Patent Application PublicationNo. 2020-14204

SUMMARY OF DISCLOSURE Technical Problem

When a radio-frequency module for multiple bands has multiple transferpaths each including the hybrid acoustic LC filter disclosed in PatentDocument 1, the inductors of the hybrid acoustic LC filters and othercircuit components in the radio-frequency module can be coupled to eachother via magnetic fields, resulting in degradation of the transfercharacteristic of the radio-frequency module.

The present disclosure has been made to address the problem describedabove, and an object thereof is to provide a radio-frequency module formultiple bands and a communication device for multiple bands in whichdegradation of the transfer characteristic caused by magnetic fieldcoupling with inductors included in hybrid filters is suppressed.

Solution to Problem

A radio-frequency module according to an aspect of the presentdisclosure includes a substrate having a first major surface and asecond major surface that are opposite to each other, a first hybridfilter including a first acoustic wave resonator element, a firstinductor, and a first capacitor, the first hybrid filter having a passband including 5th Generation New Radio (5G-NR) n77, a first filterincluding a second acoustic wave resonator element and a secondinductor, the first filter having a pass band including 5G-NR n79, afirst power amplifier and a second power amplifier, a third inductorcoupled between the first power amplifier and the first hybrid filter,the third inductor being configured to provide impedance matchingbetween the first power amplifier and the first hybrid filter, and afourth inductor coupled between the second power amplifier and the firstfilter, the fourth inductor being configured to provide impedancematching between the second power amplifier and the first filter. Thepass band width of the first hybrid filter is wider than the resonanceband width of the first acoustic wave resonator element. The firstinductor, the second inductor, the third inductor, and the fourthinductor are disposed at the first major surface or inside thesubstrate. The distance between the first inductor and the thirdinductor is larger than the distance between the second inductor and thefourth inductor.

Advantageous Effects of Disclosure

The present disclosure provides a radio-frequency module for multiplebands and a communication device for multiple bands in which degradationof the transfer characteristic caused by magnetic field coupling withinductors included in hybrid filters is suppressed.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a circuit configuration diagram of a radio-frequency moduleand a communication device according to an embodiment.

FIG. 2A illustrates an example of a circuit configuration of a firsthybrid filter according to an embodiment.

FIG. 2B illustrates an example of a circuit configuration of a secondhybrid filter according to an embodiment.

FIG. 3A provides schematic plan views of a configuration of aradio-frequency module according to a practical example.

FIG. 3B is a schematic diagram of a sectional configuration of theradio-frequency module according to the practical example.

FIG. 3C is a schematic diagram of a sectional configuration of aradio-frequency module according to a modified example.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be described indetail. The embodiments described below are all specific orcomprehensive examples. Numerical values, shapes, materials, constituentelements, arrangements of constituent elements, and modes of connection,and other specifics given in the following embodiments are merelyexamples and are not intended to limit the present disclosure. Among theconstituent elements in the practical example and modified exampledescribed later, constituent elements not recited in any of theindependent claims are described as arbitrary constituent elements. Thesizes or size ratios of the constituent elements illustrated in thedrawings are not necessarily exact. Like reference symbols are used todenote substantially like configurations in the drawings, and redundantdescriptions thereof may be omitted or simplified.

In the following description, words used to express relationshipsbetween elements, such as parallel and vertical, words used to expressthe shape of an element, such as rectangular, and numerical ranges donot necessarily denote the exact meanings but denote substantially thesame meanings involving, for example, several percent differences.

As used herein, the expression “A is disposed at a first major surfaceof a substrate” means not only that A is mounted directly on the firstmajor surface but also that of the space on the first major surface sideand the space on the second major surface side that are separated by thesubstrate, A is disposed in the space on the first major surface side.Specifically, the expression also means that A is mounted at the firstmajor surface with another circuit element, an electrode, or anotherelement that is interposed therebetween.

In the following description, the term “couple” includes not only thecase in which a circuit component is coupled directly to another circuitcomponent by using a connection terminal and/or an interconnectionconductor but also the case in which a circuit component is electricallycoupled to another circuit component via still another circuitcomponent. The expression “coupled between A and B” means that a circuitelement is coupling to both A and B while the circuit element ispositioned between A and B.

In the drawings described below, the x axis and the y axis are axesperpendicular to each other in a plane parallel to major surfaces of amodule substrate. The z axis is an axis perpendicular to major surfacesof a module substrate; the positive direction of the z axis indicates anupward direction, and the negative direction of the z axis indicates adownward direction.

Regarding the module configuration of the present disclosure, theexpression “plan view” denotes that an object orthogonally projected onan xy plane is viewed from the front side in the positive direction ofthe z axis. The expression “a component is disposed at a major surfaceof a substrate” includes the case in which the component is positionedin contact with the major surface of the substrate, the case in whichthe component is positioned over the major surface without contact withthe major surface, and the case in which the component is partiallyembedded in the substrate at the major surface.

In the following description, in the case in which A, B, and C ismounted on the substrate, the expression “when the substrate (or themajor surface of the substrate) is viewed in plan view, C is disposedbetween A and B” means that the region occupied by C is intersected byat least one of the line segments connecting points within A and pointswithin B when the substrate is viewed in plan view. The plan view of asubstrate means that the substrate and circuit elements mounted on thesubstrate are viewed in the state in which the substrate and circuitelements are orthogonally projected on a plane parallel to the majorsurface of the substrate.

In the following, a “transmit path” refers to a transfer line formed by,for example, an interconnection for transferring radio-frequencytransmit signals, an electrode directly coupled to the interconnection,and a terminal directly coupled to the interconnection or electrode.Similarly, a “receive path” refers to a transfer line formed by, forexample, an interconnection for transferring radio-frequency receivesignals, an electrode directly coupled to the interconnection, and aterminal directly coupled to the interconnection or electrode.

Embodiment

[1. Configuration of Radio-Frequency Module 1 and Communication Device 5According to Embodiment]

FIG. 1 is a circuit configuration diagram of a radio-frequency module 1and a communication device 5 according to an embodiment. As illustratedin the drawing, the communication device 5 includes the radio-frequencymodule 1, antennas 2A and 2B, a radio-frequency signal processingcircuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

The RFIC 3 is a radio-frequency signal processing circuit for processingradio-frequency signals received or to be transmitted by the antennas 2Aand 2B. Specifically, the RFIC 3 processes a receive signal inputtedthrough a receive path of the radio-frequency module 1 by for example,down-conversion and outputs the receive signal generated by the signalprocessing to the BBIC 4. The RFIC 3 outputs a radio-frequency transmitsignal processed based on a signal inputted from the BBIC 4 to atransmit path of the radio-frequency module 1.

The BBIC 4 is a circuit for performing data processing using signals offrequencies lower than radio-frequency signals transferred in theradio-frequency module 1. The signal processed by the BBIC 4 is used as,for example, an image signal for displaying an image or a sound signalfor talk through a speaker.

The RFIC 3 functions as a controller for controlling connections ofswitches 30, 31, and 32 included in the radio-frequency module 1 basedon whether the radio-frequency module 1 is used for transmission orreception and which communication band (frequency range) is used.Specifically, the RFIC 3 controls connections of the switches 30, 31,and 32 included in the radio-frequency module 1 via a control signal(not illustrated in the drawing). The controller may be external to theRFIC 3; for example, the controller may be provided in theradio-frequency module 1 or the BBIC 4.

The RFIC 3 also functions as a controller for controlling the gain ofpower amplifiers 61 and 62 included in the radio-frequency module 1 anda supply voltage Vcc and a bias voltage Vbias that are to be supplied tothe power amplifiers 61 and 62.

The antenna 2A is coupled to an antenna connection terminal 110 of theradio-frequency module 1. The antenna 2A emits a radio-frequency signaloutput from the radio-frequency module 1. The antenna 2A also receives aradio-frequency signal from outside and outputs the radio-frequencysignal to the radio-frequency module 1. The antenna 2B is coupled to anantenna connection terminal 120 of the radio-frequency module 1. Theantenna 2B emits a radio-frequency signal output from theradio-frequency module 1. The antenna 2B also receives a radio-frequencysignal from outside and outputs the radio-frequency signal to theradio-frequency module 1.

In the communication device 5 according to the present embodiment, theantennas 2A and 2B and the BBIC 4 are non-essential constituentelements.

The following describes a detailed configuration of the radio-frequencymodule 1.

As illustrated in FIG. 1 , the radio-frequency module 1 includes theantenna connection terminals 110 and 120, the switch 30, andradio-frequency circuits 10 and 20.

The antenna connection terminal 110 is a first antenna common terminalcoupled to the antenna 2A. The antenna connection terminal 120 is asecond antenna common terminal coupled to the antenna 2B.

The switch 30 is an example of a third switch. The switch 30 has commonterminals 30 a and 30 b and selection terminals 30 c, 30 d, 30 e, and 30f. In the switch 30, the common terminal 30 a is connected to ordisconnected from at least one of the selection terminals 30 c to 30 f,and the common terminal 30 b is connected to or disconnected from atleast one of the selection terminals 30 c to 30 f. The common terminal30 a is coupled to the antenna connection terminal 110. The commonterminal 30 b is coupled to the antenna connection terminal 120. Theselection terminal 30 c is coupled to a hybrid filter 11. The selectionterminal 30 d is coupled to a filter 12. The selection terminal 30 e iscoupled to a hybrid filter 21. The selection terminal 30 f is coupled toa filter 22. The switch 30 is operable to control connection anddisconnection between the hybrid filter 11 and the antenna connectionterminal 110 and connection and disconnection between the hybrid filter11 and the antenna connection terminal 120. The switch 30 is operable tocontrol connection and disconnection between the filter 12 and theantenna connection terminal 110 and connection and disconnection betweenthe filter 12 and the antenna connection terminal 120. The switch 30 isoperable to control connection and disconnection between the hybridfilter 21 and the antenna connection terminal 110 and connection anddisconnection between the hybrid filter 21 and the antenna connectionterminal 120. The switch 30 is operable to control connection anddisconnection between the filter 22 and the antenna connection terminal110 and connection and disconnection between the filter 22 and theantenna connection terminal 120.

With the connection configuration of the switch 30 described above, thecommunication device 5 is able to couple the antenna 2A to at least oneof the hybrid filters 11 and 21 and the filters 12 and 22 and to couplethe antenna 2B to at least one of the hybrid filters 11 and 21 and thefilters 12 and 22.

The radio-frequency circuit 10 includes receive output terminals 130 and150, transmit input terminals 140 and 160, the hybrid filter 11, thefilter 12, the switches 31 and 32, matching circuits 41, 42, 43, and 44,low-noise amplifiers 51 and 52, and the power amplifiers 61 and 62.

The hybrid filter 11 is an example of a first hybrid filter. The hybridfilter 11 includes at least one first acoustic wave resonator element,at least one first inductor, and at least one first capacitor. Oneterminal of the hybrid filter 11 is coupled to the selection terminal 30c. The other terminal of the hybrid filter 11 is coupled to the switch31. The pass band of the hybrid filter 11 includes Generation New Radio(5G-NR) n77 (a first communication band: 3300-4200 MHz).

The filter 12 is an example of a first filter. The filter 12 includes atleast one second acoustic wave resonator element and at least one secondinductor. One terminal of the filter 12 is coupled to the selectionterminal 30 d. The other terminal of the filter 12 is coupled to theswitch 32. The pass band of the filter 12 includes 5G-NR n79 (a secondcommunication band: 4400-5000 MHz).

The first acoustic wave resonator element and the second acoustic waveelement are, for example, acoustic wave resonator elements using surfaceacoustic waves (SAWs) or acoustic wave resonator elements using bulkacoustic waves (BAWs).

FIG. 2A illustrates an example of a circuit configuration of the hybridfilter 11 according to an embodiment. As illustrated in the drawing, thehybrid filter 11 includes acoustic wave resonator elements P1 and P2, acapacitor C3, and inductors L1, L2, and L3. Each of the acoustic waveresonator elements P1 and P2 is an example of the first acoustic waveresonator element. Each of the inductors L1, L2, and L3 is an example ofthe first inductor. The capacitor C3 is an example of the firstcapacitor.

The inductor L3 and the capacitor C3 form an LC parallel resonantcircuit. A series circuit composed of the acoustic wave resonatorelement P1 and the inductor L1 is provided between the ground and a nodein a path connecting an input-output terminal 101 and the LC parallelresonant circuit. A series circuit composed of the acoustic waveresonator element P2 and the inductor L2 is provided between the groundand a node in a path connecting an input-output terminal 102 and the LCparallel resonant circuit. The acoustic wave resonator elements P1 andP2 form an acoustic wave resonator A1, and the acoustic wave resonatorelements P1 and P2 are, for example, integrated into one chip. Theexpression “multiple acoustic wave resonator elements are integratedinto one chip” is defined such that multiple acoustic wave resonatorelements are formed on one piezoelectric substrate, or multiple acousticwave resonator elements are included in one package.

In the configuration described above, the pass band and attenuation bandof the hybrid filter 11 are determined by controlling the resonantfrequency of the LC parallel resonant circuit composed of the inductorL3 and the capacitor C3 and the resonant frequency and anti-resonantfrequency of the acoustic wave resonator elements P1 and P2. The LCparallel resonant circuit composed of the inductor L3 and the capacitorC3 determines the pass band of the hybrid filter 11, and the acousticwave resonator elements P1 and P2 determine attenuation poles.

As a result, the hybrid filter 11, by using an LC circuit, achieves widepass bands that cannot be achieved with acoustic wave resonatorelements, and by using acoustic wave resonator elements, provide steepattenuation slopes that cannot be achieved with an LC circuit.

According to this, the pass band width of the hybrid filter 11 is widerthan the resonance band width of the acoustic wave resonator elements P1and P2.

In the present embodiment, the resonance band width of an acoustic waveresonator element is defined as the difference between the anti-resonantfrequency and resonant frequency of the acoustic wave resonator element.A fractional resonance band width is defined as the proportion obtainedby dividing the resonance band width by the mean value between theanti-resonant frequency and the resonant frequency. A general SAW or BAWresonator element is known to have a frequency range of 0.1 to 10 GHzand a 3 to 4% fractional resonance band width.

The filter 12 does not necessarily include a capacitor. The pass bandwidth of the filter 12 may be narrower than or equal to the resonanceband width of the second acoustic wave resonator element.

Referring back to FIG. 1 , the circuit component of the radio-frequencycircuit 10 will be described.

The low-noise amplifier 51 is an example of a first low-noise amplifier.The low-noise amplifier 51 is an amplifier for amplifying receivesignals in the first communication band with low noise and outputtingthe receive signals to the receive output terminal 130. The low-noiseamplifier 52 is an example of a second low-noise amplifier. Thelow-noise amplifier 52 is an amplifier for amplifying receive signals inthe second communication band with low noise and outputting the receivesignals to the receive output terminal 150.

The power amplifier 61 is an example of a first power amplifier. Thepower amplifier 61 is an amplifier for amplifying transmit signals inthe first communication band inputted from the transmit input terminal140. The power amplifier 62 is an amplifier for amplifying transmitsignals in the second communication band inputted from the transmitinput terminal 160.

The matching circuit 41 is coupled between the low-noise amplifier 51and the switch 31. The matching circuit 41 is operable to provideimpedance matching between the low-noise amplifier 51 and the switch 31.The matching circuit 42 is coupled between the power amplifier 61 andthe switch 31. The matching circuit 42 is operable to provide impedancematching between the power amplifier 61 and the switch 31. The matchingcircuit 43 is coupled between the low-noise amplifier 52 and the switch32. The matching circuit 43 is operable to provide impedance matchingbetween the low-noise amplifier 52 and the switch 32. The matchingcircuit 44 is coupled between the power amplifier 62 and the switch 32.The matching circuit 44 is operable to provide impedance matchingbetween the power amplifier 62 and the switch 32.

The switch 31 is an example of a first switch. The switch 31 has acommon terminal and two selection terminals. The common terminal of theswitch 31 is coupled to the hybrid filter 11. One selection terminal ofthe switch 31 is coupled to an input terminal of the low-noise amplifier51 via the matching circuit 41. The other selection terminal of theswitch 31 is coupled to an output terminal of the power amplifier 61 viathe matching circuit 42. In other words, the switch 31 is a timedivision duplex (TDD) switch coupled to the hybrid filter 11, thelow-noise amplifier 51, and the power amplifier 61, operable toselectively connect the hybrid filter 11 to the low-noise amplifier 51or the power amplifier 61. The switch 31 is implemented by, for example,a single-pole double-throw (SPDT) switching circuit.

With the assistance of the switch 31, the hybrid filter 11 functions asa filter for combined use for transmission and reception, coupled to thelow-noise amplifier 51 and the power amplifier 61.

The switch 32 is an example of a second switch. The switch 32 has acommon terminal and two selection terminals. The common terminal of theswitch 32 is coupled to the filter 12. One selection terminal of theswitch 32 is coupled to the low-noise amplifier 52 via the matchingcircuit 43. The other selection terminal of the switch 32 is coupled tothe power amplifier 62 via the matching circuit 44. In other words, theswitch 32 is a TDD switch operable to selectively connect the filter 12to the low-noise amplifier 52 or the power amplifier 62. The switch 32is implemented by, for example, an SPDT switching circuit.

With the assistance of the switch 32, the filter 12 functions as afilter for combined use for transmission and reception, coupled to thelow-noise amplifier 52 and the power amplifier 62.

The radio-frequency circuit 20 includes receive output terminals 170 and180, the hybrid filter 21, the filter 22, matching circuits 45 and 46,and low-noise amplifiers 53 and 54.

The hybrid filter 21 is an example of a second hybrid filter. The hybridfilter 21 includes at least one third acoustic wave resonator element,at least one fifth inductor, and at least one second capacitor. Oneterminal of the hybrid filter 21 is coupled to the selection terminal 30e. The other terminal of the hybrid filter 21 is coupled to thelow-noise amplifier 53 via the matching circuit 45. The hybrid filter 21is not coupled to any power amplifier. The pass band of the hybridfilter 21 includes 5G-NR n77.

With this configuration, the hybrid filter 21 functions as a filter fordedicated use for reception, coupled between the switch 30 and thelow-noise amplifier 53.

The filter 22 is an example of a second filter. The filter 22 includesat least one fourth acoustic wave resonator element and at least onesixth inductor. One terminal of the filter 22 is coupled to theselection terminal 30 f. The other terminal of the filter 22 is coupledto the low-noise amplifier 54 via the matching circuit 46. The filter 22is not coupled to any power amplifier. The pass band of the filter 22includes 5G-NR n79.

With this configuration, the filter 22 functions as a filter fordedicated use for reception, coupled to the switch 30.

The third acoustic wave resonator element and the fourth acoustic waveelement are, for example, acoustic wave resonator elements using SAWs oracoustic wave resonator elements using BAWs.

FIG. 2B illustrates an example of a circuit configuration of the hybridfilter 21 according to an embodiment. As illustrated in the drawing, thehybrid filter 21 includes acoustic wave resonator elements P5 and P6, acapacitor C4, and inductors L4, L5, and L6. Each of the acoustic waveresonator elements P5 and P6 is an example of the second acoustic waveresonator element. Each of the inductors L4, L5, and L6 is an example ofthe second inductor. The capacitor C4 is an example of the secondcapacitor.

The inductor L4 and the capacitor C4 form an LC parallel resonantcircuit. A series circuit composed of the acoustic wave resonatorelement P5 and the inductor L5 is provided between the ground and a nodein a path connecting an input-output terminal 103 and the LC parallelresonant circuit. A series circuit composed of the acoustic waveresonator element P6 and the inductor L6 is provided between the groundand a node in a path connecting an input-output terminal 104 and the LCparallel resonant circuit. The acoustic wave resonator elements P5 andP6 form an acoustic wave resonator A2, and the acoustic wave resonatorelements P5 and P6 are, for example, integrated into one chip.

In the configuration described above, the pass band and attenuation bandof the hybrid filter 21 are determined by controlling the resonantfrequency of the LC parallel resonant circuit composed of the inductorL4 and the capacitor C4 and the resonant frequency and anti-resonantfrequency of the acoustic wave resonator elements P5 and P6. The LCparallel resonant circuit composed of the inductor L4 and the capacitorC4 determines the pass band of the hybrid filter 21, and the acousticwave resonator elements P5 and P6 determine attenuation poles.

As a result, the hybrid filter 21, by using an LC circuit, achieves widepass bands that cannot be achieved with acoustic wave resonatorelements, and by using acoustic wave resonator elements, provide steepattenuation slopes that cannot be achieved with an LC circuit.

According to this, the pass band width of the hybrid filter 21 is widerthan the resonance band width of the acoustic wave resonator elements P5and P6.

The filter 22 does not necessarily include a capacitor. The pass bandwidth of the filter 22 may be narrower than or equal to the resonanceband width of the fourth acoustic wave resonator element.

Referring back to FIG. 1 , the circuit component of the radio-frequencycircuit 20 will be described.

The low-noise amplifier 53 is an example of a third low-noise amplifier.The low-noise amplifier 53 is an amplifier for amplifying receivesignals in the first communication band with low noise and outputtingthe receive signals to the receive output terminal 170. The low-noiseamplifier 54 is an amplifier for amplifying receive signals in thesecond communication band with low noise and outputting the receivesignals to the receive output terminal 180.

The matching circuit 45 is coupled between the low-noise amplifier 53and the hybrid filter 21. The matching circuit 45 is operable to provideimpedance matching between the low-noise amplifier 53 and the hybridfilter 21. The matching circuit 46 is coupled between the low-noiseamplifier 54 and the filter 22. The matching circuit 46 is operable toprovide impedance matching between the low-noise amplifier 54 and thefilter 22.

With the circuit configuration described above, the radio-frequencymodule 1 is operable to individually transfer a transmit signal in thefirst communication band, a receive signal in the first communicationband, a transmit signal in the second communication band, and a receivesignal in the second communication band, or simultaneously transfer atleast two selected from a transmit signal in the first communicationband, a receive signal in the first communication band, a transmitsignal in the second communication band, and a receive signal in thesecond communication band.

A first transmit path including the power amplifier 61, the matchingcircuit 42, the switch 31, the hybrid filter 11, and the switch 30 isused to transfer transmit signals in the first communication band (5G-NRn77).

A second transmit path including the power amplifier 62, the matchingcircuit 44, the switch 32, the filter 12, and the switch 30 is used totransfer transmit signals in the second communication band (5G-NR n79).

A first receive path including the switch 30, the hybrid filter 11, theswitch 31, the matching circuit 41, and the low-noise amplifier 51 isused to transfer receive signals in the first communication band (5G-NRn77).

A second receive path including the switch 30, the filter 12, the switch32, the matching circuit 43, and the low-noise amplifier 52 is used totransfer receive signals in the second communication band (5G-NR n79).

A third receive path including the switch 30, the hybrid filter 21, thematching circuit 45, and the low-noise amplifier 53 is used to transferreceive signals in the first communication band (5G-NR n77).

A fourth receive path including the switch 30, the filter 22, thematching circuit 46, and the low-noise amplifier 54 is used to transferreceive signals in the second communication band (5G-NR n79).

Regarding the radio-frequency module 1, between the first communicationband (5G-NR n77) and the second communication band (5G-NR n79), thefirst communication band (5G-NR n77) is used in wider areas. In otherwords, between the first communication band (5G-NR n77) and the secondcommunication band (5G-NR n79), the first communication band (5G-NR n77)is used more frequently.

This means that between the first transmit path and the second transmitpath, the first transmit path can be used more frequently. Between thefirst receive path and the second receive path, the first receive pathcan be used more frequently. Between the third receive path and thefourth receive path, the third receive path can be used more frequently.

At least two or more of the low-noise amplifiers 51, 52, 53, and 54 andthe switches 30, 31, and 32 may be integrated into one semiconductorintegrated circuit (IC). The semiconductor IC may be implemented by, forexample, a CMOS circuit. Specifically, the semiconductor IC is producedby a silicon-on-insulator (SOI) process. In this manner, thesemiconductor IC can be manufactured with low costs. The semiconductorIC may be made of at least any of GaAs, SiGe, and GaN. This enablesoutput of radio-frequency signals with high amplification performanceand low-noise performance.

The circuit configuration of the hybrid filter 11 according to thepresent embodiment and the circuit configuration of the hybrid filter 21according to the present embodiment are not limited to the circuitconfiguration in FIG. 2A and the circuit configuration in FIG. 2B. It issufficient that each of the hybrid filters 11 and 21 according to thepresent embodiment includes one or more acoustic wave resonatorelements, one or more inductors, and one or more capacitors; and thepass band width of the hybrid filter is wider than the resonance bandwidth of the acoustic wave resonator element. In the circuitconfiguration of each of the hybrid filters 11 and 21 according to thepresent embodiment, no switch is provided between any acoustic waveresonator element and the LC circuit. For example, in the hybrid filter11, no switch is inserted between the LC parallel resonant circuitcomposed of the inductor L3 and the capacitor C3 and the acoustic waveresonator element P1 and between the LC parallel resonant circuit andthe acoustic wave resonator element P2.

Both of the one terminal of the hybrid filter 11 and the one terminal ofthe filter 12 may be coupled to one selection terminal of the switch 30.Both of the one terminal of the hybrid filter 21 and the one terminal ofthe filter 22 may be coupled to one selection terminal of the switch 30.

Filters may be individually coupled between the switch 31 and thelow-noise amplifier 51, between the switch 31 and the power amplifier61, between the switch 32 and the low-noise amplifier 52, and betweenthe switch 32 and the power amplifier 62.

It is sufficient that the radio-frequency module 1 according to thepresent embodiment include, among the circuit components and circuitelements illustrated in FIG. 1 , at least the hybrid filter 11, thefilter 12, the power amplifiers 61 and 62, and the matching circuit 42and 44.

Because the radio-frequency module 1 having the circuit configurationdescribed above includes hybrid filters each composed of acoustic waveresonator elements, inductors, and a capacitor, the inductors of thehybrid filters and other circuit components can be coupled to each othervia magnetic fields, resulting in degradation of the transfercharacteristic of the radio-frequency module 1.

In this respect, the following describes a configuration of theradio-frequency module 1 in which degradation of the transfercharacteristic caused by magnetic field coupling with the inductorsincluded in the hybrid filters is suppressed.

[2. Arrangement of Circuit Elements of Radio-Frequency Module 1AAccording to Practical Example]

FIG. 3A provides schematic plan views of a configuration of aradio-frequency module 1A according to a practical example. FIG. 3B is aschematic diagram of a sectional configuration of the radio-frequencymodule 1A according to the practical example, more specifically, asectional view taken along line IIIB-IIIB in FIG. 3A. In FIG. 3A, (a)illustrates an arrangement of circuit components when, between majorsurfaces 80 a and 80 b of a module substrate 80 that are opposite toeach other, the major surface 80 a is viewed from the front side in thepositive direction of the z axis. In FIG. 3A, (b) provides a cutawayview of the arrangement of circuit components when the major surface 80b is viewed from the front side in the positive direction of the z axis.In FIG. 3A, for ease of understanding of the positional relationshipamong the circuit components, the individual circuit components areassigned corresponding symbols representing the function of each circuitcomponent, although the symbols are not displayed in the radio-frequencymodule 1A in actual applications.

The radio-frequency module 1A according to the practical examplespecifically presents an arrangement of the circuit elements of theradio-frequency module 1 according to an embodiment.

As illustrated in FIGS. 3A and 3B, the radio-frequency module 1Aaccording to the practical example includes, as well as the circuitconfiguration illustrated in FIG. 1 , the module substrate 80, resinmembers 81 and 82, external connection terminals 100, and a metal shieldlayer 85.

The module substrate 80 is an example of a substrate. The modulesubstrate 80 has the major surface 80 a and the major surface 80 b thatare opposite to each other. On the module substrate 80, the circuitcomponents constituting the radio-frequency module 1A are mounted. Asthe module substrate 80, for example, a low temperature co-firedceramics (LTCC) substrate having a layered structure composed ofmultiple dielectric layers, a high temperature co-fired ceramics (HTCC)substrate, a component-embedded substrate, a substrate including aredistribution layer (RDL), or a printed-circuit board is used.

In this practical example, the major surface 80 a corresponds to a firstmajor surface, and the major surface 80 b corresponds to a second majorsurface.

The module substrate 80 is an example of a substrate. It is desirablethat the module substrate 80 have a multilayer structure including astack of multiple dielectric layers, and a ground electrode pattern beformed in at least one of the dielectric layers. This improves theelectromagnetic field blocking capability of the module substrate 80.

As illustrated in (b) of FIG. 3A, the antenna connection terminals 110and 120, the transmit input terminals 140 and 160, and the receiveoutput terminals 130, 150, 170 and 180 may be formed at the majorsurface 80 b.

The resin member 81 is disposed at the major surface to cover a portionof the circuit components constituting the radio-frequency module 1A andthe major surface 80 a. The resin member 82 is disposed at the majorsurface 80 b to cover a portion of the circuit components constitutingthe radio-frequency module 1A and the major surface 80 b. The resinmembers 81 and 82 have the function of maintaining the security of theproperties of the circuit components constituting the radio-frequencymodule 1A such as mechanical strength and moisture resistance.

The metal shield layer 85 covers the surface of the resin member 81. Themetal shield layer 85 is set at a ground potential. The metal shieldlayer 85 is, for example, a thin metal film formed by sputtering.

The resin members 81 and 82 and the metal shield layer are non-essentialconstituent elements in the radio-frequency module 1 according to thepresent embodiment.

In this practical example, each of the matching circuits 41 to 46includes an inductor. The matching circuit 42 includes a third inductor.The matching circuit 44 includes a fourth inductor.

Although not illustrated in FIG. 3A, interconnections connecting thecircuit components illustrated in FIG. 1 are formed inside the modulesubstrate 80 and at the major surfaces 80 a and 80 b. Theinterconnections may be bonding wires with ends joined to the majorsurfaces 80 a and 80 b and any of the circuit components constitutingthe radio-frequency module 1A, or connectors, electrodes, or wires thatare formed on the surface of the circuit components constituting theradio-frequency module 1A.

As illustrated in FIG. 3A, in the radio-frequency module 1A according tothe practical example, the hybrid filters 11 and 21, the filters 12 and22, the power amplifiers 61 and 62, and the matching circuits 42, 44,45, and 46 are disposed at the major surface 80 a. The switches 31, and32 and the low-noise amplifiers 51, 52, 53, and 54 are disposed at themajor surface 80 b. The matching circuit 41 and 43 are disposed insidethe module substrate 80.

According to the configuration described above, the hybrid filter 11 andthe filter 12, the power amplifiers 61 and 62, the low-noise amplifiers51 to 54, and the switches to 32, which constitute the radio-frequencymodule 1A, are separately disposed across the module substrate 80 fromeach other, at both surfaces of the module substrate 80. In this manner,the size of the radio-frequency module 1A is reduced.

It is sufficient that at least one of the circuit componentsconstituting the radio-frequency module 1A be disposed at the majorsurface 80 a, and at least another one of the circuit components bedisposed at the major surface 80 b. The arrangement illustrated in FIG.3A should not be interpreted as limiting, and the arrangement does notdetermine which of the major surfaces 80 a and 80 b each circuitcomponent should be disposed at. The matching circuit 41 may be disposedat the major surface 80 a or the major surface 80 b. The matchingcircuit 43 may be disposed at the major surface 80 a or the majorsurface 80 b.

In this practical example, the acoustic wave resonator A1 (the acousticwave resonator elements P1 and P2), the capacitor C3, and the inductorsL1, L2, and L3, which constitute the hybrid filter 11, are disposed atthe major surface 80 a. An acoustic wave resonator A3 (the secondacoustic wave resonator element) and inductors L7 and L8 (the secondinductor) that constitute the filter 12 are disposed at the majorsurface 80 a. The low-noise amplifiers 51 and 52 are disposed at themajor surface 80 b. At least one of the acoustic wave resonator elementsP1 and P2, the capacitor C3, and the inductors L1, L2, and L3 may bedisposed at the major surface 80 a, and at least another one of theacoustic wave resonator elements P1 and P2, the capacitor C3, and theinductors L1, L2, and L3 may be disposed inside the module substrate 80or at the major surface 80 b. With this configuration, one or some ofthe circuit elements of the hybrid filter 11 and the low-noiseamplifiers 51 and 52 are separately disposed across the module substrate80 from each other at both surfaces of the module substrate 80, and as aresult, the size of the radio-frequency module 1A is reduced.

At least one of the acoustic wave resonator A3 (the second acoustic waveresonator element) and the inductor L7 (the second inductor), whichconstitute the filter 12, may be disposed at the major surface 80 a, andat least another one of the acoustic wave resonator A3 and the inductorL7 may be disposed inside the module substrate 80 or at the majorsurface 80 b.

In this practical example, as illustrated in (a) of FIG. 3A, theinductors L1, L2, and L3 (the first inductor), the inductors L7 and L8(the second inductor), the third inductor of the matching circuit 42,and the fourth inductor of the matching circuit 44 are disposed at themajor surface 80 a or inside the module substrate 80. A distance d11between the inductors L1, L2, and L3 and the third inductor is largerthan a distance d12 between the inductors L7 and L8 and the fourthinductor.

This configuration makes the degree of magnetic field coupling betweenthe inductors L1, L2, and L3 of the hybrid filter 11 and the thirdinductor of the matching circuit 42 lower than the degree of magneticfield coupling between the inductors L7 and L8 of the filter 12 and thefourth inductor of the matching circuit 44. This means that it ispossible to relatively reduce the likelihood that transmit signals beingtransferred along the first transmit path be routed around at least oneof the third inductor, the switch 31, and the hybrid filter 11. As aresult, the quality of transmit signals transferred along the firsttransmit path is higher than the quality of transmit signals transferredalong the second transmit path. This configuration makes the quality oftransmit signals in the first communication band (5G-NR n77), which isused in wider areas and used more frequently, higher than the quality oftransmit signals in the second communication band (5G-NR n79). As such,it is possible to provide the radio-frequency module 1 in whichdegradation of the transfer characteristic caused by magnetic fieldcoupling with the first inductor included in the hybrid filter 11 issuppressed.

In the radio-frequency module 1A according to the practical example,when the module substrate 80 is viewed in plan view, the followingquadrants are provided: (1) a first quadrant Q2 that is an upper-leftregion with respect to a reference point R1 on the module substrate 80,(2) a second quadrant Q3 that is a lower-left region with respect to thereference point R1, (3) a third quadrant Q4 that is a lower-right regionwith respect to the reference point R1, and (4) a fourth quadrant Q1that is an upper-right region with respect to the reference point R1. Inthis case, at least a portion of the power amplifier 61 and at least aportion of the power amplifier 62 are disposed in the first quadrant Q2,and at least a portion of the third inductor included in the matchingcircuit 42 and at least a portion of the fourth inductor included in thematching circuit 44 are disposed in the second quadrant Q3. At least aportion of the hybrid filter 11 and at least a portion of the filter 12are disposed in the third quadrant Q4. A distance d1 between the poweramplifier 61 and the reference point R1 is larger than a distance d2between the power amplifier 62 and the reference point R1. A distance d3between the third inductor and the reference point R1 is larger than adistance d4 between the fourth inductor and the reference point R1. Adistance d5 between the hybrid filter 11 and the reference point R1 islarger than a distance d6 between the filter 12 and the reference pointR1. In other words, the power amplifier 61 is disposed farther from thereference point R1 than the power amplifier 62, the third inductor isdisposed farther from the reference point R1 than the fourth inductor,and the hybrid filter 11 is disposed farther from the reference point R1than the filter 12.

The reference point R1 on the module substrate 80 is defined as a pointof the module substrate 80, not included in the outer edges of themodule substrate 80 when the module substrate 80 is viewed in plan view.In other words, when the module substrate 80 is viewed in plan view, thereference point R1 is positioned on the module substrate 80 such thatthe first quadrant Q2, the second quadrant Q3, the third quadrant Q4,and the fourth quadrant Q1 are provided on the module substrate 80.

With this configuration, the power amplifier 61, the matching circuit42, and the hybrid filter 11, which are provided in the first transmitpath, are respectively disposed in the first quadrant Q2, the secondquadrant Q3 and the third quadrant Q4. As such, when the modulesubstrate 80 is viewed in plan view from the front side in the positivedirection of the Z axis, the first transmit path is formed as arelatively short path circled around the reference point R1 in thecounterclockwise direction. Similarly, the power amplifier 62, thematching circuit 44, and the filter 12, which are provided in the secondtransmit path, are respectively disposed in the first quadrant Q2, thesecond quadrant Q3 and the third quadrant Q4. As such, when the modulesubstrate 80 is viewed in plan view from the front side in the positivedirection of the Z axis, the second transmit path is formed as arelatively short path circled around the reference point R1 in thecounterclockwise direction. As a result, the first transmit path and thesecond transmit path for transmitting high-power transmit signals aremade relatively short. It is thus possible to implement theradio-frequency module 1A for multiple bands having a low-loss signaltransfer characteristic. Also, power consumption by the radio-frequencymodule 1A is reduced.

The power amplifier 61 is disposed farther from the reference point R1than the power amplifier 62, the third inductor is disposed farther fromthe reference point R1 than the fourth inductor, and the hybrid filter11 is disposed farther from the reference point R1 than the filter 12.As a result, the first transmit path and the second transmit path do notcross. This configuration inhibits interference between transmit signalsin the first communication band (5G-NR n77) and transmit signals in thesecond communication band (5G-NR n79). As such, it is possible toprovide the radio-frequency module 1A in which degradation of thetransmit signal transfer characteristic is suppressed.

In the radio-frequency module 1A according to the practical example, theexternal connection terminals 100 are disposed at the major surface 80b. The radio-frequency module 1A exchanges electrical signals with anexternal substrate provided on the front side in the negative directionof the z axis with respect to the radio-frequency module 1A, through theexternal connection terminals 100. Some of the external connectionterminals 100 may be, as illustrated in (b) of FIG. 3A, the antennaconnection terminals 110 and 120, the transmit input terminals 140 and160, and the receive output terminals 130, 150, 170 and 180. Others ofthe external connection terminals 100 are set at the ground potential ofthe external substrate.

The external connection terminals 100 may be columnar electrodesextending in the Z-axis direction through the resin member 82 asillustrated in FIGS. 3A and 3B. Alternatively, the external connectionterminals 100 may be bump electrodes formed on the major surface 80 b.In this case, the resin member 82 on the major surface 80 b is notnecessarily provided.

The power amplifiers 61 and 62, which cannot be easily formed aslow-profile structures, are disposed at the major surface 80 a. Withthis configuration, the major surface 80 b does not have any circuitcomponent that cannot be easily formed as a low-profile structure, andthe height of the major surface 80 b side of the radio-frequency module1A is thus easily reduced.

Between the major surfaces 80 a and 80 b, the major surface 80 b facingthe external substrate has the low-noise amplifiers 51 to 54 and theswitches 30 to 32, which can be easily formed as low-profile structures.With this configuration, the major surface 80 b has circuit componentsthat can be easily formed as low-profile structures, and the height ofthe major surface 80 b side of the radio-frequency module 1A is thuseasily reduced. This means that the height of the radio-frequency module1A is reducible.

The low-noise amplifiers 51 to 54 and the switch 30 are included in asemiconductor IC 71. With this configuration, it is possible to reducethe size and height of the low-noise amplifiers 51 to 54 and the sizeand height of the switch 30.

The switches 31 and 32 are included in a semiconductor IC 72. With thisconfiguration, it is possible to reduce the size and height of theswitches 31 and 32.

Because the semiconductor ICs 71 and 72 are disposed at the majorsurface 80 b, it is possible to reduce the height of the radio-frequencymodule 1A.

As illustrated in FIGS. 3A and 3B, when the module substrate 80 isviewed in plan view, the hybrid filter 11 and the switch 30 at leastpartially overlap.

With this configuration, the hybrid filter 11 and the switch 30, throughwhich both transmit signals and receive signals pass, are coupled toeach other mainly by a via interconnect formed inside the modulesubstrate 80 in the vertical direction of the module substrate 80. Assuch, the interconnection connecting the hybrid filter 11 and the switch30 is relatively short. This configuration reduces transfer loss oftransmit signals and receive signals in the first communication band.

In this practical example, at least a portion of the hybrid filter 21and at least a portion of the filter 22 are disposed in the fourthquadrant Q1. With this configuration, it is possible to arrange withhigh density the circuit components constituting the radio-frequencymodule 1A in a well-balanced manner.

The hybrid filter 21 is disposed at the major surface 80 a, and thelow-noise amplifier 53 coupled to the hybrid filter 21 via the matchingcircuit 45 is disposed at the major surface 80 b. As illustrated inFIGS. 3A and 3B, when the module substrate 80 is viewed in plan view,the hybrid filter 21 and the low-noise amplifier 53 at least partiallyoverlap.

With this configuration, the hybrid filter 21 and the low-noiseamplifier 53 are coupled to each other mainly by a via interconnectformed inside the module substrate 80 in the vertical direction of themodule substrate 80. As such, the interconnection connecting the hybridfilter 21 and the low-noise amplifier 53 is relatively short. Thisconfiguration reduces transfer loss of receive signals in the firstcommunication band.

[3. Arrangement of Circuit Elements of Radio-Frequency Module 1BAccording to Modified Example]

FIG. 3C is a schematic diagram of a sectional configuration of aradio-frequency module 1B according to a modified example. Theradio-frequency module 1B according to the modified example specificallypresents an arrangement of the circuit elements of the radio-frequencymodule 1 according to an embodiment.

The radio-frequency module 1B illustrated in FIG. 3C differs from theradio-frequency module 1A according to the practical example in thearrangement of the circuit elements constituting the hybrid filter 11and the filter 12. The following describes the radio-frequency module 1Baccording to this modified example with a main focus on configurationsdifferent from the radio-frequency module 1A according to the practicalexample, and descriptions of the same configurations as theradio-frequency module 1A according to the first practical example arenot repeated.

The hybrid filter 11 includes the acoustic wave resonator A1 (theacoustic wave resonator elements P1 and P2), the capacitor C3, and theinductors L1, L2, and L3.

The filter 12 includes the acoustic wave resonator A3 and the inductorsL7 and L8.

Of the hybrid filter 11, the acoustic wave resonator A1 and thecapacitor C3 are disposed at the major surface 80 a, and the inductor L3is formed inside the module substrate 80. The inductor L3 is formed by,for example, multiple planar coil conductors and via-conductorsconnecting the planar coil conductors.

Of the filter 12, the acoustic wave resonator A3 and the inductor L7 aredisposed at the major surface 80 a, and the inductor L8 is formed insidethe module substrate 80. The inductor L8 is formed by, for example,multiple planar coil conductors and via-conductors connecting the planarcoil conductors.

According to the configuration described above, some of the circuitelements constituting the hybrid filter 11 are disposed at the majorsurface 80 a, while the other of the circuit elements are formed insidethe module substrate 80. As a result, it is possible to reduce the sizeof the radio-frequency module 1B.

The circuit element formed inside the module substrate 80 may be anacoustic wave resonator or capacitor.

[4. Effects]

As described above, the radio-frequency module 1A according to thepractical example includes the module substrate 80 having the majorsurfaces 80 a and 80 b that are opposite to each other, the hybridfilter 11 including the first acoustic wave resonator element, the firstinductor, and the first capacitor, having a pass band including 5G-NRn77, the filter 12 including the second acoustic wave resonator elementand the second inductor, having a pass band including 5G-NR n79, thepower amplifiers 61 and 62, the third inductor coupled between the poweramplifier 61 and the hybrid filter 11, and the fourth inductor coupledbetween the power amplifier 62 and the filter 12. The pass band width ofthe hybrid filter 11 is wider than the resonance band width of the firstacoustic wave resonator element. The first inductor, the secondinductor, the third inductor, and the fourth inductor are disposed atthe major surface 80 a or inside the module substrate 80. The distancebetween the first inductor and the third inductor is larger than thedistance between the second inductor and the fourth inductor.

This configuration makes the degree of magnetic field coupling betweenthe first inductor and the third inductor lower than the degree ofmagnetic field coupling between the second inductor and the fourthinductor. This means that it is possible to relatively reduce thelikelihood that transmit signals being transferred along the firsttransmit path be routed around at least one of the third inductor andthe hybrid filter 11. As a result, the quality of transmit signalstransferred along the first transmit path is higher than the quality oftransmit signals transferred along the second transmit path. Thisconfiguration makes the quality of transmit signals in the firstcommunication band (5G-NR n77), which is used in wider areas and usedmore frequently, higher than the quality of transmit signals in thesecond communication band (5G-NR n79). As such, it is possible toprovide the radio-frequency module 1A in which degradation of thetransfer characteristic caused by magnetic field coupling with the firstinductor included in the hybrid filter 11 is suppressed.

In the radio-frequency module 1A according to the practical example,when the module substrate 80 is viewed in plan view, in the case inwhich (1) a first quadrant Q2 that is an upper-left region with respectto a reference point R1 on the module substrate 80, (2) a secondquadrant Q3 that is a lower-left region with respect to the referencepoint R1, (3) a third quadrant Q4 that is a lower-right region withrespect to the reference point R1, and (4) a fourth quadrant Q1 that isan upper-right region with respect to the reference point R1 areprovided, at least a portion of the power amplifier 61 and at least aportion of the power amplifier 62 may be disposed in the first quadrantQ2; at least a portion of the third inductor and at least a portion ofthe fourth inductor may be disposed in the second quadrant Q3; at leasta portion of the hybrid filter 11 and at least a portion of the filter12 may be disposed in the third quadrant Q4; the power amplifier 61 maybe disposed farther form the reference point R1 than the power amplifier62; the third inductor may be disposed farther form the reference pointR1 than the fourth inductor; and the hybrid filter 11 may be disposedfarther form the reference point R1 than the filter 12.

With this configuration, the power amplifier 61, the third inductor, andthe hybrid filter 11, which are provided in the first transmit path, arerespectively disposed in the first quadrant Q2, the second quadrant Q3and the third quadrant Q4. As such, when the module substrate 80 isviewed in plan view from the front side in the positive direction of theZ axis, the first transmit path is formed as a relatively short pathcircled around the reference point R1 in the counterclockwise direction.Similarly, the power amplifier 62, the fourth inductor, and the filter12, which are provided in the second transmit path, are respectivelydisposed in the first quadrant Q2, the second quadrant Q3 and the thirdquadrant Q4. As such, when the module substrate 80 is viewed in planview from the front side in the positive direction of the Z axis, thesecond transmit path is formed as a relatively short path circled aroundthe reference point R1 in the counterclockwise direction. As a result,the first transmit path and the second transmit path for transmittinghigh-power transmit signals are made relatively short. It is thuspossible to implement the radio-frequency module 1A for multiple bandshaving a low-loss signal transfer characteristic. Also, powerconsumption by the radio-frequency module 1A is reduced. The poweramplifier 61 is disposed farther from the reference point R1 than thepower amplifier 62, the third inductor is disposed farther from thereference point R1 than the fourth inductor, and the hybrid filter 11 isdisposed farther from the reference point R1 than the filter 12. As aresult, the first transmit path and the second transmit path do notcross. This configuration inhibits interference between transmit signalsin the first communication band (5G-NR n77) and transmit signals in thesecond communication band (5G-NR n79). As such, it is possible toprovide the radio-frequency module 1A in which degradation of thetransmit signal transfer characteristic is suppressed.

The radio-frequency module 1A according to the practical example and theradio-frequency module 1B according to the modified example may furtherinclude the low-noise amplifiers 51 and 52 disposed at the major surfacethe switch 31 coupled to the hybrid filter 11, the low-noise amplifier51, and the third inductor, configured to selectively connect the hybridfilter 11 to the low-noise amplifier 51 or the third inductor, and theswitch 32 coupled to the filter 12, the low-noise amplifier 52, and thefourth inductor, configured to selectively connect the filter 12 to thelow-noise amplifier 52 or the fourth inductor.

With this configuration, one or some of the circuit elements of thehybrid filter 11 and the low-noise amplifiers 51 and 52 are separatelydisposed across the module substrate 80 from each other at both surfacesof the module substrate 80 and inside the module substrate 80, and as aresult, the size of the radio-frequency modules 1A and 1B is reduced.

In the radio-frequency module 1A according to the practical example andthe radio-frequency module 1B according to the modified example, thefirst acoustic wave resonator element, the second acoustic waveresonator element, and the first capacitor may be disposed at the majorsurface 80 a or inside the module substrate 80.

With this configuration, one or some of the circuit elementsconstituting the hybrid filter 11 and one or some of the circuitelements constituting the filter 12 are disposed at the major surface 80a or inside the module substrate 80, and as a result, the size of theradio-frequency modules 1A and 1B is reduced.

The radio-frequency module 1A according to the practical example mayfurther include the external connection terminals 100 disposed at themajor surface 80 b. The power amplifiers 61 and 62 may be disposed atthe major surface 80 a.

In this configuration, the power amplifiers 61 and 62, which cannot beeasily formed as low-profile structures, are disposed at the majorsurface 80 a. Because the major surface 80 b does not have any circuitcomponent that cannot be easily formed as a low-profile structure, theheight of the major surface 80 b side of the radio-frequency module 1Ais easily reduced.

The radio-frequency module 1A according to the practical example mayfurther include the switch 30 coupled to the hybrid filter and thefilter 12, configured to control connection and disconnection betweenthe hybrid filter 11 and the antenna connection terminals 110 and 120and connection and disconnection between the filter 12 and the antennaconnection terminals 110 and 120. When the module substrate 80 is viewedin plan view, the hybrid filter 11 and the switch 30 may at leastpartially overlap.

With this configuration, the hybrid filter 11 and the switch 30, throughwhich both transmit signals and receive signals pass, are coupled toeach other mainly by a via interconnect formed inside the modulesubstrate 80 in the vertical direction of the module substrate 80. Assuch, the interconnection connecting the hybrid filter 11 and the switch30 is relatively short. This configuration reduces transfer loss oftransmit signals and receive signals in the first communication band.

In the radio-frequency module 1A according to the practical example, thelow-noise amplifiers 51 and 52 and the switch 30 may be included in thesemiconductor IC 71 disposed at the major surface 80 b.

With this configuration, it is possible to reduce the size and height ofthe low-noise amplifiers 51 and 52 and the size and height of the switch30. Because the semiconductor IC 71 is disposed at the major surface 80b, it is possible to reduce the height of the radio-frequency module 1A.

The radio-frequency module 1A according to the practical example mayfurther include the hybrid filter 21 including the third acoustic waveresonator element, the fifth inductor, and the second capacitor, havinga pass band including 5G-NR n77, and the filter 22 including the fourthacoustic wave resonator element and the sixth inductor, having a passband including 5G-NR n79. The hybrid filter 21 and the filter 22 may befilters for dedicated use for reception. At least a portion of thehybrid filter 21 and at least a portion of the filter 22 may be disposedin the fourth quadrant Q1.

With this configuration, it is possible to arrange with high density thecircuit components constituting the radio-frequency module 1A in awell-balanced manner.

The radio-frequency module 1A according to the practical example mayfurther include the low-noise amplifier 53 coupled to the hybrid filter21. When the module substrate 80 is viewed in plan view, the hybridfilter 21 and the low-noise amplifier 53 may at least partially overlap.

With this configuration, the hybrid filter 21 and the low-noiseamplifier 53 are coupled to each other mainly by a via interconnectformed inside the module substrate 80 in the vertical direction of themodule substrate 80. As such, the interconnection connecting the hybridfilter 21 and the low-noise amplifier 53 is relatively short. Thisconfiguration reduces transfer loss of receive signals in the firstcommunication band.

The communication device 5 includes the RFIC 3 for processingradio-frequency signals received by the antennas 2A and 2B and theradio-frequency module 1 for transferring the radio-frequency signalsbetween the antennas 2A and 2B and the RFIC 3.

With this configuration, it is possible to provide the communicationdevice 5 for multiple bands in which degradation of the transfercharacteristic caused by magnetic field coupling with the inductorsincluded in the hybrid filter 11 is suppressed.

Other Embodiments

The radio-frequency module and communication device according to thepresent disclosure has been described by using an embodiment, practicalexample, and modified example, but the present disclosure is not limitedto the embodiment, practical example, and modified example describedabove. The present disclosure also embraces other embodimentsimplemented as any combination of the constituent elements of theembodiment, practical example, and modified example, other modifiedexamples obtained by making various modifications to the embodiment thatoccur to those skilled in the art without departing from the scope ofthe present disclosure, and various hardware devices including theradio-frequency module or communication device according to the presentdisclosure.

For example, in the radio-frequency module and communication deviceaccording to an embodiment, practical example, and modified example, amatching element such as an inductor or capacitor and a switchingcircuit may be coupled among the constituent elements. The inductor mayinclude a wire inductor formed by a wire serving as an interconnectionbetween constituent elements.

INDUSTRIAL APPLICABILITY

The present disclosure can be used, as a radio-frequency module orcommunication device operable in multiband systems, in a wide variety ofcommunication devices such as mobile phones.

REFERENCE SIGNS LIST

-   -   1, 1A, 1B radio-frequency module    -   2A, 2B antenna    -   3 RF signal processing circuit (RFIC)    -   4 baseband signal processing circuit (BBIC)    -   5 communication device    -   20 radio-frequency circuit    -   11, 21 hybrid filter    -   12, 22 filter    -   31, 32 switch    -   30 b common terminal    -   30 d, 30 e, 30 f selection terminal    -   41, 42, 43, 44, 45, 46 matching circuit    -   51, 52, 53, 54 low-noise amplifier    -   61, 62 power amplifier    -   71, 72 semiconductor IC    -   80 module substrate    -   80 b major surface    -   81, 82 resin member    -   85 metal shield layer    -   100 external connection terminal    -   101, 102, 103, 104 input-output terminal    -   110, 120 antenna connection terminal    -   130, 150, 170, 180 receive output terminal    -   140, 160 transmit input terminal    -   A1, A2, A3 acoustic wave resonator    -   C3, C4 capacitor    -   d1, d2, d3, d4, d5, d6, d11, d12 distance    -   L1, L2, L3, L4, L5, L6, L7, L8 inductor    -   P1, P2, P5, P6 acoustic wave resonator element    -   Q1 fourth quadrant    -   Q2 first quadrant    -   Q3 second quadrant    -   Q4 third quadrant    -   R1 reference point

1. A radio-frequency module comprising: a substrate having a first majorsurface and a second major surface that are opposite to each other; afirst hybrid filter including a first acoustic wave resonator element, afirst inductor, and a first capacitor, the first hybrid filter having apass band including 5th Generation New Radio (5G-NR) n77; a first filterincluding a second acoustic wave resonator element and a secondinductor, the first filter having a pass band including 5G-NR n79; afirst power amplifier and a second power amplifier; a third inductorcoupled between the first power amplifier and the first hybrid filter;and a fourth inductor coupled between the second power amplifier and thefirst filter, wherein a pass band width of the first hybrid filter iswider than a resonance band width of the first acoustic wave resonatorelement, the first inductor, the second inductor, the third inductor,and the fourth inductor are disposed at the first major surface orinside the substrate, and a distance between the first inductor and thethird inductor is larger than a distance between the second inductor andthe fourth inductor.
 2. The radio-frequency module according to claim 1,wherein when the substrate is viewed in plan view, in a case in which(1) a first quadrant that is an upper-left region with respect to areference point on the substrate, (2) a second quadrant that is alower-left region with respect to the reference point, (3) a thirdquadrant that is a lower-right region with respect to the referencepoint, and (4) a fourth quadrant that is an upper-right region withrespect to the reference point are provided, at least a portion of thefirst power amplifier and at least a portion of the second poweramplifier are disposed in the first quadrant, at least a portion of thethird inductor and at least a portion of the fourth inductor aredisposed in the second quadrant, at least a portion of the first hybridfilter and at least a portion of the first filter are disposed in thethird quadrant, the first power amplifier is disposed farther from thereference point than the second power amplifier, the third inductor isdisposed farther from the reference point than the fourth inductor, andthe first hybrid filter is disposed farther from the reference pointthan the first filter.
 3. The radio-frequency module according to claim2, further comprising: a first low-noise amplifier disposed at thesecond major surface and a second low-noise amplifier disposed at thesecond major surface; a first switch coupled to the first hybrid filter,the first low-noise amplifier, and the third inductor, the first switchbeing configured to selectively connect the first hybrid filter to thefirst low-noise amplifier or the third inductor; and a second switchcoupled to the first filter, the second low-noise amplifier, and thefourth inductor, the second switch being configured to selectivelyconnect the first filter to the second low-noise amplifier or the fourthinductor.
 4. The radio-frequency module according to claim 3, whereinthe first acoustic wave resonator element, the second acoustic waveresonator element, and the first capacitor are disposed at the firstmajor surface or inside the substrate.
 5. The radio-frequency moduleaccording to claim 4, further comprising: an external connectionterminal disposed at the second major surface, wherein the first poweramplifier and the second power amplifier are disposed at the first majorsurface.
 6. The radio-frequency module according to claim 5, furthercomprising: a third switch coupled to the first hybrid filter and thefirst filter, the third switch being configured to control connectionand disconnection between the first hybrid filter and an antennaconnection terminal and connection and disconnection between the firstfilter and the antenna connection terminal, wherein when the substrateis viewed in plan view, the first hybrid filter and the third switch atleast partially overlap.
 7. The radio-frequency module according toclaim 6, wherein the first low-noise amplifier, the second low-noiseamplifier, and the third switch are included in a semiconductorintegrated circuit (IC) disposed at the second major surface.
 8. Theradio-frequency module according to claim 2, further comprising: asecond hybrid filter including a third acoustic wave resonator element,a fifth inductor, and a second capacitor, the second hybrid filterhaving a pass band including 5G-NR n77; and a second filter including afourth acoustic wave resonator element and a sixth inductor, the secondfilter having a pass band including 5G-NR n79, wherein the second hybridfilter and the second filter are filters for dedicated use forreception, and at least a portion of the second hybrid filter and atleast a portion of the second filter are disposed in the fourthquadrant.
 9. The radio-frequency module according to claim 8, furthercomprising: a third low-noise amplifier coupled to the second hybridfilter, wherein when the substrate is viewed in plan view, the secondhybrid filter and the third low-noise amplifier at least partiallyoverlap.
 10. The radio-frequency module according to claim 1, furthercomprising: a first low-noise amplifier disposed at the second majorsurface and a second low-noise amplifier disposed at the second majorsurface; a first switch coupled to the first hybrid filter, the firstlow-noise amplifier, and the third inductor, the first switch beingconfigured to selectively connect the first hybrid filter to the firstlow-noise amplifier or the third inductor; and a second switch coupledto the first filter, the second low-noise amplifier, and the fourthinductor, the second switch being configured to selectively connect thefirst filter to the second low-noise amplifier or the fourth inductor.11. The radio-frequency module according to claim 10, wherein the firstacoustic wave resonator element, the second acoustic wave resonatorelement, and the first capacitor are disposed at the first major surfaceor inside the substrate.
 12. The radio-frequency module according toclaim 11, further comprising: an external connection terminal disposedat the second major surface, wherein the first power amplifier and thesecond power amplifier are disposed at the first major surface.
 13. Theradio-frequency module according to claim 12, further comprising: athird switch coupled to the first hybrid filter and the first filter,the third switch being configured to control connection anddisconnection between the first hybrid filter and an antenna connectionterminal and connection and disconnection between the first filter andthe antenna connection terminal, wherein when the substrate is viewed inplan view, the first hybrid filter and the third switch at leastpartially overlap.
 14. The radio-frequency module according to claim 13,wherein the first low-noise amplifier, the second low-noise amplifier,and the third switch are included in a semiconductor integrated circuit(IC) disposed at the second major surface.
 15. The radio-frequencymodule according to claim 1, wherein the first acoustic wave resonatorelement, the second acoustic wave resonator element, and the firstcapacitor are disposed at the first major surface or inside thesubstrate.
 16. The radio-frequency module according to claim 15, furthercomprising: an external connection terminal disposed at the second majorsurface, wherein the first power amplifier and the second poweramplifier are disposed at the first major surface.
 17. Theradio-frequency module according to claim 16, further comprising: athird switch coupled to the first hybrid filter and the first filter,the third switch being configured to control connection anddisconnection between the first hybrid filter and an antenna connectionterminal and connection and disconnection between the first filter andthe antenna connection terminal, wherein when the substrate is viewed inplan view, the first hybrid filter and the third switch at leastpartially overlap.
 18. The radio-frequency module according to claim 17,wherein the first low-noise amplifier, the second low-noise amplifier,and the third switch are included in a semiconductor integrated circuit(IC) disposed at the second major surface.
 19. A communication devicecomprising: a radio-frequency (RF) signal processing circuit configuredto process a radio-frequency signal received by an antenna; and theradio-frequency module according to claim 1, the radio-frequency modulebeing configured to transfer the radio-frequency signal between theantenna and the RF signal processing circuit.
 20. A communication devicecomprising: a radio-frequency (RF) signal processing circuit configuredto process a radio-frequency signal received by an antenna; and theradio-frequency module according to claim 7, the radio-frequency modulebeing configured to transfer the radio-frequency signal between theantenna and the RF signal processing circuit.